?200 8 f airchild semiconductor corporation 1 www.fairchildsemi.com fcp20n60 / fcpf20n60 rev. a 2 fcp20n60 / fcpf20n60 600v n-channel mosfet fcp20n60 / fcpf20n60 600v n-channel mosfet features ? 650v @t j = 150c ?typ. r ds(on) = 0.15 ? ? ultra low gate charge (typ. q g = 75nc) ? low effective output capacitance (typ. c oss .eff = 165pf) ? 100% avalanche tested description superfet tm is, fa i rchild?s proprietary, new generation of high voltage mosfet family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. this advanced technology has been tailored to minimize con- duction loss, provide superior switching performance, and with- stand extreme dv/dt rate and higher avalanche energy. consequently, superfet is very suitable for various ac/dc power conversion in switching mode operation for system min- iaturization and higher efficiency. absolute maximum ratings *drain current limited by maximum junction temperature thermal characteristics { { { z z z { { { z z z s d g to-220 g s d to-220f g s d symbol parameter fcp20n60 fcpf20n60 unit v dss drain-source voltage 600 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 20 12.5 20* 12.5* a a i dm drain current - pulsed (note 1) 60 60* a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 690 mj i ar avalanche current (note 1) 20 a e ar repetitive avalanche energy (note 1) 20.8 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 208 1.67 39 0.3 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c symbol parameter fcp20n60 fcpf20n60 unit r jc thermal resistance, junction-to-case 0.6 3.2 c/w r ja thermal resistance, junction-to-ambient 62.5 62.5 c/w ? rohs compliant december 2008 superfet tm
2 www.fairchildsemi.com fcp20n60 / fcpf20n60 rev. a 2 fcp20n60 / fcpf20n60 600v n-channel mosfet package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. i as = 10a, v dd = 50v, r g = 25 ? , starting t j = 25 c 3. i sd 20a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics device marking device package reel size tape width quantity fcp20n60 fcp20n60 to-220 - - 50 fcpf20n60 fcpf20n60 to-220f - - 50 symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 a, t j = 25 c 600 -- -- v v gs = 0v, i d = 250 a, t j = 150 c--650--v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c--0.6--v/ c bv ds drain-source avalanche breakdown voltage v gs = 0v, i d = 20a -- 700 -- v i dss zero gate voltage drain current v ds = 600v, v gs = 0v v ds = 480v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a3 . 0 - - 5 . 0 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 10a -- 0.15 0.19 ? g fs forward transconductance v ds = 40v, i d = 10a (note 4) -- 17 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 2370 3080 pf c oss output capacitance -- 1280 1665 pf c rss reverse transfer capacitance -- 95 -- pf c oss output capacitance v ds = 480v, v gs = 0v, f = 1.0mhz -- 65 85 pf c oss eff. effective output capacitance v ds = 0v to 400v, v gs = 0v -- 165 -- pf switching characteristics t d(on) turn-on delay time v dd = 300v, i d = 20a r g = 25 ? (note 4, 5) -- 62 135 ns t r turn-on rise time -- 140 290 ns t d(off) turn-off delay time -- 230 470 ns t f turn-off fall time -- 65 140 ns q g total gate charge v ds = 480v, i d = 20a v gs = 10v (note 4, 5) -- 75 98 nc q gs gate-source charge -- 13.5 18 nc q gd gate-drain charge -- 36 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 20 a i sm maximum pulsed drain-source diode forward current -- -- 60 a v sd drain-source diode forward voltage v gs = 0v, i s = 20a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 20a di f /dt =100a/ s (note 4) -- 530 -- ns q rr reverse recovery charge -- 10.5 -- c
3 www.fairchildsemi.com fcp20n60 / fcpf20n60 rev. a 2 fcp20n60 / fcpf20n60 600v n-channel mosfet typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage variation vs. source current and temperatue figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v notes : 1. 250 s pulse test 2. t c = 25 c i d , drain current [a] v ds , drain-source voltage [v] 24681 0 10 0 10 1 10 2 note 1. v ds = 40v 2. 250 s pulse test -55 c 150 c 25 c i d , drain current [a] v gs , gate-source voltage [v] 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0.0 0.1 0.2 0.3 0.4 v gs = 20v v gs = 10v note : t j = 25 c r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0.20.40.60.81.01.21.41.6 10 0 10 1 10 2 25 c 150 c notes : 1. v gs = 0v 2. 250 s pulse test i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 1020304050607080 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v note : i d = 20a v gs , gate-source voltage [v] q g , total gate charge [nc]
4 www.fairchildsemi.com fcp20n60 / fcpf20n60 rev. a 2 fcp20n60 / fcpf20n60 600v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9-1. maximum safe operating area figure 9-2. maximum safe operating area for fcp20n60 for fcpf20n60 figure 10. maximum drain current vs. case temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 20 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 operation in this area is limited by r ds(on) dc 10 ms 1 ms 100 us notes : 1. t c = 25 c 2. t j = 150 c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 100 us dc 100 ms 10 ms 1 ms operation in this area is limited by r ds(on) notes : 1. t c = 25 c 2. t j = 150 c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 5 10 15 20 25 i d , drain current [a] t c , case temperature [ c]
5 www.fairchildsemi.com fcp20n60 / fcpf20n60 rev. a 2 fcp20n60 / fcpf20n60 600v n-channel mosfet typical performance characteristics (continued) figure 11-1. transient thermal response curve for fcp20n60 figure 11-2. transient thermal response curve for fcpf20n60 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n otes : 1 . z jc (t) = 0.6 c/w max. 2. duty factor, d=t 1 /t 2 3 . t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse d uration [sec] t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1. z jc (t) =3.2 c/w max. 2. d uty f actor, d = t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , s quare w ave p ulse d uration [sec] t 1 p dm t 2
6 www.fairchildsemi.com fcp20n60 / fcpf20n60 rev. a 2 fcp20n60 / fcpf20n60 600v n-channel mosfet charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d( on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d( on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
7 www.fairchildsemi.com fcp20n60 / fcpf20n60 rev. a 2 fcp20n60 / fcpf20n60 600v n-channel mosfet peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
8 www.fairchildsemi.com fcp20n60 / fcpf20n60 rev. a 2 fcp20n60 / fcpf20n60 600v n-channel mosfet mechanical dimensions dimensions in millimeters to - 220
(7.00) (0.70) max1.47 (30) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 3.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 0.05 to-220f dimensions in millimeters 9 www.fairchildsemi.com fcp20n60 / fcpf20n60 rev. a 2 fcp20n60 / fcpf20n60 600v n-channel mosfet mechanical dimensions (continued)
rev. i37 trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. * ezswitch? and flashwriter ? are trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support dev ices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform c an be reasonably expected to cause the failure of the life s upport device or system, or to affect its safety or effectiveness. product status definitions definition of terms build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? ecospark ? efficentmax? ezswitch? * ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motionmax? motion-spm? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? ? saving our world, 1mw /w /kw at a time? smartmax? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 supremos? syncfet? ? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? ultra frfet? unifet? vcx? visualmax? xs? tm ? tm tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fa richild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts expe rience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing del ays. fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. farichild strongly encourages customers to purchase farichild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to farichild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any wa rranty coverage or other assistance for parts bought from unau thorized sources. farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 10 www.fairchildsemi.com fcp20n60 / fcpf20n60 rev. a 2 fcp20n60 / fcpf20n60 600v n-channel mosfet
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